Thin Film System TFS 500 ALD reactor is designed for doping, protective coating, functional surface buildup and thin film processing purposes. Substrate alternatives include wafers and other planar substrates, powders and porous substrates and complex 3D substrates. TFS 500 can be equipped with a manual load lock for rapid wafer processing. Reactor operates in batch mode. Variable reaction chambers can be fitted to the reactor making it possible to optimize the reaction chamber design depending on the application.
Technical informationFree vacuum chamber volume 500 x 500 mm (ø x L)
- Precursor sources, max 4 gas (incl. ozone), 4 liquid, 2 hot (max 500°C)
- Deposition temperature, max 500°C
- Deposition pressure typically < 20 mbar (optionally up to 1000 mbar)
- Main dimensions 1600 x 900 x 1930 mm (L x W x H)
- Connection power 10 kW
- Control system PLC with PC user interface
Additional options available:
- Chiller for liquid sources
- Scrubber
- UPS
- Manual load lock
- Ozone generator
