Anodic bonder is used for joining 4" Pyrex glass wafers and silicon wafers together permanently and hermetically. A strong chemical bond between the wafers is achieved by applying high voltage over the wafer stack at high temperature. Anodic bonder is equipped with a high voltage source (0-1000V), an automatic temperature controller, a pressure controller and a wafer stack compression unit. Bonding is accomplished at low pressure, usually at temperature 350 C and with voltage 200-400 V.

Technical information

Wafer size	3-4" (silicon and Pyrex glass)
Typical processing temperature	350-450°C
Bonding voltage	0-1000 V (with quarts insulation)
Process gas	Nitrogen
Clamping unit	Compressed air powered
Wafer alignment	Manual
Typical bonding pressure	mbar region (mechanical pumping)