Manufacturer: Semilab Inc.
Description:
The deep level transient spectroscopy (DLTS) is a technique for monitoring and characterizing deep levels caused by intentionally or unintentionally introduced impurities and defects in semiconductor materials and complete devices. It is an extremely versatile method for determining all parameters associated with deep traps including energy level, capture cross section and concentration distribution. It permits identification of the impurities and is capable of detecting contamination concentrations below 109 atoms/cm3.
The DLS-83D offers a fully automatic measurement mode as well as provides a complete interpretation of the measured data, including impurity identification and concentration determination without any need for user interaction.
The Transient Ion Drift (TID) measurement mode is available for the detection of interstitial copper.
The measurement is carried out on such a sample, which has a space charge layer i.e. a measurable space charge capacitance (for example Schottky contact or pn-junction). The maximum size of the sample measured by conventional DLTS is 1cm 1cm. For TID measurements 4cm ´ 4cm sample size is possible.
| Bias voltage and excitation pulse | -20V…20V |
| Excitation pulse frequency | 0.1 - 2500Hz |
| Excitation pulse width | 50 ns - 65 ms |
| Temperature range | 77 K - 450 K (liquid nitrogen cryostat) 20 K - 330 K (closed cycle He-cryostat) |
