The NV-3206 high-performance ion implantation system with cassette loadlock (produced by Eaton Corporation, USA) combines uniformity of ion beam for a whole wafer and high purity of implanted species. It meets the standard demands of semiconductor technology.
Technical information| Ion energy | 20 - 200 keV |
| Beam current | Up to 500 µA |
| Ions | Ar+, B+, P+ and Si+ |
| Ion dose | 1x1012 - 1x1017 cm-2 |
| Uniformity | 5% |
| Implantation time for dose of 1x1016 cm-2 | 30 minutes |
| Wafer size | 4" only |
