Manufacturer: Semilab Inc.
Description:
Lifetime scanner is used for monitoring defects and contamination both in the bulk and in the surface region of silicon wafers. The scanner consists of three non-contact and non-destructive measurement techniques: SPV, µPCD, and Kelvin. All the techniques can be used to measure wafers and/or wafer fragments of any shape and size up to 200 mm. A full wafer mapping capability is provided with all three techniques.
Method for the measurement of bulk minority carrier recombination lifetime. A chemical surface passivation for bare wafers or corona charging of the oxidised surfaces is possible. Together with light activation, automatic iron concentration mapping is also available. No thickness limitations.
Technical data:
| Microwave frequency | 10.1 GHz to 10.6 GHz |
| Output power of microwavehead | ³ 40 mW |
| Laser source | InGaAs pulsed laser diode |
| Output power of the laser | stabillized and programmable up to 16.4 W |
| Optical pulse width | 200 ns |
| Wavelength | 905 nm ± 10nm |
| Pulse rate | max. 1 kHz |
| Raster of scanned maps | 16, 8, 4, 2, 1, 0.5 mm/point |
| Bias light possibility | yes |
Method for the diffusion length measurement. Together with light activation, automatic iron concentration mapping is also available.
Technical data:
| Number of lasers (wavelengths) | 4 (784 nm, 900 nm, 986 nm, 1013 nm) |
| Frequency | 200, 400, 800 or 1600 Hz |
| Raster of scanned maps | 16, 8, 4, 2, 1, 0.5 mm/point |
| Bias light possibility | yes |
A measurement technique for characterization of dielectrics (oxide and/or dielectric layer) and the silicon interface. Allows high resolution, whole wafer mapping of oxide charge and surface potential barrier distribution. By applying corona charging, mobile charge in the oxide can also be monitored throughout the wafer.
Technical data:
| Vibration frequency | 200-400 Hz |
| Voltage range | ± 100 V |
| Resolution | 1 mV |
| Raster of scanned maps | 16, 8, 4, 2, 1, 0.5 mm/point |
| Bias light possibility | yes |
The lifetime scanner is capable of measuring the lifetime in the 80-520 K temperature range with the optional sample cooling and heating system up to 100 mm wafer size.
Additional bias-laser can be used to make injection-level dependent lifetime measurements. The bias laser can also be used for high-intensity illumination of the wafers.
Technical data:
| Main operation mode | Continue Wave |
| Side operation mode | Pulse-periodic (pulse duration 0.2 - 100 ms) (repetition rate 0.1 - 100Hz) |
| Wavelength | 973.5 nm |
| Range of controlled CW output power | 0.1 - 1000 mW |
KG201 Corona Charge Generator is available for placing negative and positive ions on insulator materials. The built-in hot-chuck and air-cushion system makes possible 25-300 °C annealing of wafers. The main purpose of the equipment is to charge up oxidised silicon wafers of up to 8 inch in an accurate and controlled way.
| Current limit | < 5 A |
| Needle voltage | 15 kV |
| Charge polarity | + / - |
| Charge amount | 1 - 99999 µC |
| Accuracy | 0.1 µC |