The MCM 220B plasma etcher (produced by Alcatel CIT, France) is automatic, cassette-to-cassette system for etching of Si, Si3N4, SiO2 or Al films. The machine consists of two processing chambers for chlorine and fluorine chemistry, respectively. Programs, which specify the parameters for etching, known as recipes, can be loaded into the system and then modified as necessary. A built-in optical endpoint detector is used to determine the completion of the etch process.
Technical information| Wafer size | 4" only (3", using Al2O3 holder) | |
| Fluorine chamber gases | SF6, CHF3, N2, Ar/O2 | |
| Chlorine chamber gases | CCl4, BCl3, Cl2, N2 | |
| Pressure range | 1 - 24 Pa | |
| RF power | 20 - 300 W | |
| Typical etching rate of: | Al | 200 nm/min |
| Si | 500 nm/min | |
| SiO2 | 20 nm/min | |
