General information

Four programmable process tubes for diffusion and oxidation of silicon wafers. The paddle movement, heating and gas flows are computer controlled.

Technical information

Wafer size	100 mm
Temperature ramp up	Max.15°C/min
Temperature ramp down	Max 4°C/min
Gas flow	0-10 slpm
Paddle movement	0-100 cm/min

Tube specific information

Tube	Temperature, °C	Gas	Purpose
1	550-1150	N2,O2	Extra clean (Fe)
2	550-1150	N2,O2	Extra clean
3	300-1050	N2,O2	Diffusion (boron SOG)
4	300-1050	N2	Diffusion (Cu)