General information

Double-walled glass container with about 3 liters of 25% concentrated TMAH (Tetra-Methyl-Ammonium Hydroxide) solution. Separate temperature controllers for the heating and cooling water circulations (both are closed circulation systems).

Technical information

Wafer size	100 mm (smaller pieces possible)
Amount of wafers simultaneously	1 - 25
Temperature	Min. 20°C , Max. 95°C
Temperature control	±0.5°C
Etching duration	Over twenty-four hours
Etch rate for silicon	0.45 µm/min (at 85°C)
Etch rate for silicon oxide	0.8 nm/min (at 85°C)
Etch rate for LPCVD nitride	0.017 nm/min (at 85°C)
Etch rate for PECVD nitride	1.0 nm/min (at 85°C)