The TKK cleanroom is partitioned as follows:
| Designation |
Class |
Function |
| F7 |
5 (100) |
Oxidation / Diffusion furnaces |
| F8 |
4 (10) |
Lithography |
| F9 |
5 (100) |
Reserved |
| F10 |
5 (100) |
Plasma processing & measurement |
| F11 |
5 (100) |
Oxidation / Diffusion furnaces 2 |
| F12 |
5 (100) |
Chemistry |
| R13 |
7 (10 000) |
Analysis, Electron microscopy, Wafer bonding |
| 1019 |
N/A |
Thin film, Wafer dicing, Chemistry |
Our process equipment is mostly for 100 mm diameter wafers, with
provisions to expand to 150 mm. The following facilities are
available:
- Double-sided optical lithography
- Furnaces:
- Wet or dry oxidation
- Annealing and sintering
- Silicon nitride LPCVD
- Separate furnaces for contamination critical and non-critical
applications
- Plasma processing:
- PECVD for amorphous silicon, silicon nitride and silicon dioxide
- RIE with CF4, SF6 and O2 gases
- Sputtering system for aluminum, chromium, titanium and platinum
- 200 kV ion implanter
- Anodic bonding, wafer dicing
- Optical and scanning electron microscopy, ellipsometer,
reflectometer, profilometer and other analytical techniques
- Thermal and e-beam evaporation of various metals, e.g. Al, Au, Ag,
Cu, Zn, Mg, Pb etc.
